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  s s 5 2 t h r u s s 5 2 0 schottk y barrier rectifier r everse v oltage - 20 to 200 v olts forward current - 5.0amperes fea tures mechanical d a t a maximum ra tings and electrical chara cteristics plastic pack age has under writers l aborator y flammability classification 94v -0 metal silicon junction ,majority carrier conduction f or sur face mount applications l ow power loss ,high efficiency high current capability ,l ow for ward voltage drop l ow profile pack age built-in strain relief ,ideal for automated placement f or use in low voltage ,high frequency inver ters, free wheeling ,and polarity protection applications high temperature soldering guaranteed:260 c/10 seconds at terminals case : jedec smc(do -214ab) molded plastic body t erminals : solder plated ,solderable per mil -std -750,method 2026 p olarity : color band denotes cathode end w eight : 0.007ounce,0.21 gram (r atings at 25 c ambient temperature unless other wise specified ,single phase ,half wave ,resistive or inductive load. f or capacitive load,derate by 20%.) dimensions in inches and (millimeters) smc(do-214ab) 0.128(3.25) 0.103(2.62) 0.280(7.11) 0.320(8.13) 0.060(1.52) 0.012(0.305) 0.008(0.203) max 0.245(6.22) 0.108(2.75) 0.079(2.00) 0.260(6.60) 0.305(7.75) 0.030(0.76) 0.006(0.152) 0.220(5.59) notes : 1 . pulse test: 300 s pulse width,1% duty cycle 2 . p .c.b. mounted 0.55x0.55"(14x14mm) copper pad areas 3 . measured at 1mhz and reverse voltage of 4.0 volts maximum repetitive peak reverse voltage v rrm v olts v olts v olts v olts m a a mps a mps v rms v dc i (a v) i f sm t stg v f i r c j t j r ja maximum rms voltage maximum dc blocking voltage maximum average for ward rectified current 0.375"(9.5mm) lead length(see fig.1) maximum instantaneous for ward voltage at 5.0 a(note 1 ) t =25 c t =100 c a a t ypical thermal resistance (note 2) t ypical junction capacitance(note 3) operating junction temperature range storage temperature range maximum instantaneous reverse current at rated dc blocking voltage(note 1) p eak for ward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method at rated t l ) 5.0 150.0 -65 to+150 -65 to+150 400 500 55.0 17.0 0.2 10 50 0.55 0.70 p f c/w c c 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 80 57 80 100 71 100 symbols units ss 52 ss 53 ss 54 ss 55 ss 56 ss 58 ss 510 ss 520 ss 515 200 140 200 150 105 150 0.90 0.85 0 . 95 r jl gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017 1 xinghe electronics e?o??
0.01 0.001 0.01 1 0.1 10 20 0.1 1 0 30 60 90 120 150 50 10 0 20 0 40 60 80 100 1 10 100 0.2 0.4 0.6 0.8 1.0 1.6 1.4 1.2 fig.1-forw ard current dera ting curve fig.2-maximum non-repetitive peak forw ard surge current fig.3- typical inst ant aneous forw ard chara cteristics fig.4- typical reverse chara cteristics i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a m p e r e s ) i n s t a n t a n e o u s r e v e r s e c u r r e n t ( m a ) p e a k f o r w a r d s u r g e c u r r e n t ( a m p e r e s ) inst ant aneous forw ard vol t age (vol ts) reverse vol t age. vol ts t , pulse dura tion ,sec. percent of ra ted peak reverse vol t age% number of cycles a t 60hz t j =25 c t j =125 c t j =150 c pulse width=300 s 1% duty cycle t j =t j max 8.3ms single half sine- wa ve (jedec method) t j =25 c 10 1 10 0.1 0.1 0.1 0.01 1 1 10 10 100 100 100 1000 100 fig.5- typical junction cap a cit ance fig.6- typical transient thermal imped ance j u n c t i o n c a p a c i t a n c e ( p f ) t r a n s i e n t t h e r m a l i m p e d a n c e , c / w t j =25 c f=1.0mh z vsig=50mvp-p ss52-ss54 ss55-ss520 ss52-ss54 ss55-ss520 ss52-ss54 ss55-ss520 t j =75 c t j =125 c 0 20 40 60 80 100 120 150 0 2.0 3.0 4.0 5.0 1.0 a v e r a g e f o r w a r d c u r r e n t a m p e r e s lead tempera ture ( c) p .c.b .mo unt ed on 0.5 5 x 0.5 5"(1 4 x 14 mm ) cop per pa d a rea sh 2 gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017 s s 5 2 t h r u s s 5 2 0 schottk y barrier rectifier r everse v oltage - 20 to 200 v olts forward current - 5.0amperes xinghe electronics e?o??


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